MJD2955T4G
Manufacturer:
On Semiconductor
Mfr.Part #:
MJD2955T4G
Datasheet:
Description:
BJTs DPAK-3 SMD/SMT PNP 1.75 W Collector Base Voltage (VCBO):70 V Collector Emitter Voltage (VCEO):60 V Emitter Base Voltage (VEBO):5 V
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -60 V |
| Length | 6.73 mm |
| Width | 6.22 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 2.38 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| Polarity | PNP |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Frequency | 2 MHz |
| Number of Elements | 1 |
| Current Rating | -10 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 1.75 W |
| Power Dissipation | 1.75 W |
| Max Collector Current | 10 A |
| Collector Emitter Breakdown Voltage | 60 V |
| Transition Frequency | 2 MHz |
| Element Configuration | Single |
| Max Frequency | 500 kHz |
| Collector Emitter Voltage (VCEO) | 60 V |
| Max Junction Temperature (Tj) | 150 °C |
| Max Breakdown Voltage | 60 V |
| Gain Bandwidth Product | 2 MHz |
| Collector Base Voltage (VCBO) | 70 V |
| Collector Emitter Saturation Voltage | 1.1 V |
| Emitter Base Voltage (VEBO) | 5 V |
| hFE Min | 20 |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Max Cutoff Collector Current | 50 µA |
| Transistor Type | PNP |
Stock: 947
Distributors
pcbx
pcbxUnit Price$0.56342
Ext.Price$0.56342
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.56342 | $0.56342 |
| 10 | $0.45744 | $4.57440 |
| 25 | $0.42099 | $10.52475 |
| 50 | $0.38745 | $19.37250 |
| 100 | $0.35657 | $35.65700 |
| 300 | $0.31517 | $94.55100 |
| 500 | $0.27858 | $139.29000 |
| 1000 | $0.26326 | $263.26000 |